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Freescale Semiconductor Technical Data
Replaced by MRF5S19060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.
Document Number: MRF5S19060M Rev. 5, 5/2006
RF Power Field Effect Transistors
MRF5S19060MR1 MRF5S19060MBR1
1990 MHz, 12 W AVG., 28 V 2 x N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 28 Volt base station equipment. * Typical 2 - carrier N - CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 12 Watts Avg., Full Frequency Band. IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 14 dB Drain Efficiency -- 23% IM3 @ 2.5 MHz Offset -- - 37 dBc in 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset -- - 51 dBc in 30 kHz Channel Bandwidth * Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 12 Watts Avg. Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * 200C Capable Plastic Package * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
ARCHIVE INFORMATION
CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF5S19060MR1
CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF5S19060MBR1
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value - 0.5, +65 - 0.5, +15 218.8 1.25 - 65 to +175 200 Unit Vdc Vdc W W/C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 75C, 12 W CW Symbol RJC Value (1) 0.80 Unit C/W
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5S19060MR1 MRF5S19060MBR1 1
RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) C (Minimum) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 225 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 750 mAdc) Drain - Source On - Voltage (VGS = 5 Vdc, ID = 2.25 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2.25 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.5 -- pF VGS(th) VGS(Q) VDS(on) gfs 2.5 -- -- -- -- 3.8 0.26 5 3.5 -- -- -- Vdc Vdc Vdc S Symbol IDSS IDSS IGSS Min -- -- -- Typ -- -- -- Max 10 1 1 Unit Adc Adc Adc
ARCHIVE INFORMATION
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 750 mA, Pout = 12 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz., 2 - carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in 30 kHz Channel Bandwidth @ 885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ 2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. Gps D IM3 ACPR IRL 12.5 21 -- -- -- 14 23 - 37 - 51 - 12 16 -- - 35 - 48 -9 dB % dBc dBc dB
(continued)
MRF5S19060MR1 MRF5S19060MBR1 2 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Typical RF Performance (50 ohm system) Pulse Peak Power (VDD = 28 Vdc, 1 - Tone CW Pulsed, IDQ = 750 mA, tON = 8 s, 1% Duty Cycle) Video Bandwidth (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 750 mA, Tone Spacing = 1 MHz to VBW, IM3<2dB) Psat -- 110 -- W Symbol Min Typ Max Unit
VBW
--
35
--
MHz
ARCHIVE INFORMATION
MRF5S19060MR1 MRF5S19060MBR1 RF Device Data Freescale Semiconductor 3
ARCHIVE INFORMATION
Z11 VBIAS R1 R2 + C1 C2 Z6 C3 + C4 + C5 + C6 VSUPPLY
R3 RF INPUT RF OUTPUT
Z1 C7
Z2
Z3
Z4
Z5
Z7
Z8
Z9 C12 C10 C11
Z10
DUT C8 C9
ARCHIVE INFORMATION
Z12
+ C13 C14
+ C15
Z1 Z2* Z3* Z4* Z5 Z6 Z7
0.250 0.500 0.500 0.515 0.480 1.140 0.600
x 0.083 x 0.083 x 0.083 x 0.083 x 1.000 x 0.080 x 1.000
Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip
Z8* Z9* Z10 Z11 Z12 PCB
0.420 x 0.083 Microstrip 0.975 x 0.083 Microstrip 0.250 x 0.083 Microstrip 0.700 x 0.080 Microstrip 0.700 x 0.080 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55
* Variable for tuning
Figure 1. MRF5S19060MR1/MBR1 Test Circuit Schematic
Table 6. MRF5S19060MR1/MBR1 Test Circuit Component Designations and Values
Part C1 C2 C3, C7, C12, C13 C4, C5, C14, C15 C6 C8 C9 C10 C11 R1, R2 R3 Description 1 F, 35 V Tantalum Capacitor 10 pF 100B Chip Capacitor 6.8 pF 100B Chip Capacitors 10 F, 35 V Tantalum Capacitors 220 F, 63 V Electrolytic Capacitor, Radial 0.8 pF 100B Chip Capacitor 1.5 pF 100B Chip Capacitor 1.0 pF 100B Chip Capacitor 0.2 pF 100B Chip Capacitor 10 kW, 1/4 W Chip Resistors (1206) 10 W, 1/4 W Chip Resistors (1206) Part Number TAJB105K35 100B10R0CW 100B6R8CW TAJD106K035 13668221 100B0R8BW 100B1R5BW 100B1R0BW 100B0R2BW Manufacturer AVX ATC ATC AVX Philips ATC ATC ATC ATC
MRF5S19060MR1 MRF5S19060MBR1 4 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
VGG R1 R2 C1 C2 C3
VDD
C4 C5
R3 CUT OUT AREA
C6
C7
C8
C9
C10
C11
C12
ARCHIVE INFORMATION
C14
C15
C13 MRF5S19060M Rev 0 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF5S19060MR1/MBR1 Test Circuit Component Layout
MRF5S19060MR1 MRF5S19060MBR1 RF Device Data Freescale Semiconductor 5
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -5 -10 -15 -20 IRL, INPUT RETURN LOSS (dB) 14.8 14.6 Gps, POWER GAIN (dB) 14.4 14.2 14 13.8 ACPR 13.6 1900 1920 1940 1960 1980 2000 -53 2020 VDD = 28 Vdc, Pout = 12 W (Avg.), IDQ = 750 mA 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing, 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) IRL D Gps IM3 24 23 22 -35 -41 -47
ARCHIVE INFORMATION
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance @ Pout = 12 Watts Avg.
14 Gps, POWER GAIN (dB) 13.8 13.6 13.4 13.2 13 1900 1.2288 MHz Channel Bandwidth, PAR = 9.8 dB @ 0.01% Probability (CCDF) Gps
D VDD = 28 Vdc, Pout = 30 W (Avg.), IDQ = 750 mA 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing,
37 35
D, DRAIN EFFICIENCY (%)
14.2
39
IM3 IRL
IM3 (dBc), ACPR (dBc)
-25 -31
-5 -10 -15 -20
ACPR
-37 -43 2020
1920
1940
1960
1980
2000
f, FREQUENCY (MHz)
Figure 4. 2 - Carrier N - CDMA Broadband Performance @ Pout = 30 Watts Avg.
17 IDQ = 1150 mA 950 mA 15 750 mA
IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
16 Gps, POWER GAIN (dB)
VDD = 28 Vdc f1 = 1960 MHz, f2 = 1962.5 MHz Two -Tone Measurements, 2.5 MHz Tone Spacing
-15 -20 -25 -30 -35 -40 IDQ = 350 mA
VDD = 28 Vdc f1 = 1960 MHz, f2 = 1962.5 MHz Two -Tone Measurements, 2.5 MHz Tone Spacing
1150 mA 950 mA
14
550 mA
-45 -50 -55 -60 1 550 mA 750 mA
13 350 mA 12 1 10 Pout, OUTPUT POWER (WATTS) PEP 100
10 Pout, OUTPUT POWER (WATTS) PEP
100
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF5S19060MR1 MRF5S19060MBR1 6 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
-10 -15 -20 -25 -30 -35 -40 -45 -50 -55 0.1 1 10 100 5th Order 7th Order 3rd Order VDD = 28 Vdc, Pout = 12 W (Avg.), IDQ = 750 mA Two -Tone Measurements, Center Frequency = 1960 MHz Pout, OUTPUT POWER (dBm)
54 53 52 51 50 49 48 47 46 45 44 30 31
P3dB = 49.4 dBm (87 W)
Ideal
P1dB = 48.65 dBm (73.3 W) Actual
VDD = 28 Vdc, IDQ = 750 mA Pulsed CW, 8 sec(on), 1 msec(off) f = 1960 MHz 32 33 34 35 36 37 38 39 40 41 42 43 44
ARCHIVE INFORMATION
TWO -TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 7. Intermodulation Distortion Products versus Tone Spacing
Figure 8. Pulse CW Output Power versus Input Power
40 35 30 25 20 15 10 5 0 1
TC = -30_C D VDD = 28 Vdc, IDQ = 750 mA 25_C f1 = 1960 MHz, f2 = 1962.5 MHz 85_C 2-Carrier N-CDMA, 2.5 MHz Carrier 85_C IM3 Spacing, 1.2288 MHz Channel 25_C Bandwidth, PAR = 9.8 dB -30_C @ 0.01% Probability (CCDF) ACPR 85_C 25_C -30_C Gps -30_C 25_C 85_C
-10 -20 IM3, (dBc), ACPR (dBc) -30 -40 -50 -60 -70 -80 -90
10 Pout, OUTPUT POWER (WATTS) AVG.
100
Figure 9. 2 - Carrier N - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power
16 TC = -30_C Gps, POWER GAIN (dB) 15 25_C 14 85_C 13 12 11 10 1 10 Pout, OUTPUT POWER (WATTS) CW VDD = 28 Vdc IDQ = 750 mA f = 1960 MHz D 85_C -30_C 25_C
60 D, DRAIN EFFICIENCY (%) 50 40 30 20 Gps 10
16 15 Gps, POWER GAIN (dB) VDD = 32 V 14 13 28 V 12 11 10 30 IDQ = 750 mA f = 1960 MHz 90
24 V 50 70
0 100
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency versus CW Output Power RF Device Data Freescale Semiconductor
Figure 11. Power Gain versus Output Power MRF5S19060MR1 MRF5S19060MBR1 7
ARCHIVE INFORMATION
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
TYPICAL CHARACTERISTICS
109 MTTF FACTOR (HOURS X AMPS2)
108
107
ARCHIVE INFORMATION
90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 12. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK -TO-AVERAGE (dB) IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ 885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ 2.5 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. (dB)
0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -7.5 -6 -4.5 -3 -IM3 in 1.2288 MHz Integrated BW
1.2288 MHz Channel BW
+IM3 in 1.2288 MHz Integrated BW
-ACPR in 30 kHz Integrated BW
+ACPR in 30 kHz Integrated BW
Figure 13. 2 - Carrier CCDF N - CDMA
-1.5
0
1.5
3
4.5
6
7.5
f, FREQUENCY (MHz)
Figure 14. 2 - Carrier N - CDMA Spectrum
MRF5S19060MR1 MRF5S19060MBR1 8 RF Device Data Freescale Semiconductor
ARCHIVE INFORMATION
106
f = 1990 MHz
ARCHIVE INFORMATION
f = 1930 MHz
f = 1990 MHz
Zsource
f = 1930 MHz Zo = 5
VDD = 28 Vdc, IDQ = 750 mA, Pout = 12 W Avg. f MHz 1930 1960 1990 Zsource 3.11 - j4.55 3.06 - j4.38 2.93 - j4.28 Zload 2.60 - j3.18 2.50 - j2.85 2.44 - j2.53
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 15. Series Equivalent Source and Load Impedance
MRF5S19060MR1 MRF5S19060MBR1 RF Device Data Freescale Semiconductor 9
ARCHIVE INFORMATION
Zload
NOTES
MRF5S19060MR1 MRF5S19060MBR1 10 RF Device Data Freescale Semiconductor
NOTES
MRF5S19060MR1 MRF5S19060MBR1 RF Device Data Freescale Semiconductor 11
PACKAGE DIMENSIONS
B E1 E3
2X
A
GATE LEAD
DRAIN LEAD
D1
4X
D e
b1 aaa M C A
4X
D2 c1 H
DATUM PLANE ZONE J
2X
2X
E
F
A1 A2 E2 E5 E4
2X
A
NOTE 7
C
SEATING PLANE
PIN 5
NOTE 8
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 --- .551 .559 .353 .357 .132 .140 .124 .132 .270 --- .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 --- 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 --- 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10
4
D3
3
MRF5S19060MR1 MRF5S19060MBR1 12 RF Device Data Freescale Semiconductor
CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC CCCCCC
E5 BOTTOM VIEW
1
2
CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF5S19060MR1
STYLE 1: PIN 1. 2. 3. 4. 5.
MRF5S19060MR1 MRF5S19060MBR1 RF Device Data Freescale Semiconductor 13
MRF5S19060MR1 MRF5S19060MBR1 14 RF Device Data Freescale Semiconductor
MRF5S19060MR1 MRF5S19060MBR1 RF Device Data Freescale Semiconductor 15
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MRF5S19060MR1 MRF5S19060MBR1
Rev. 16 5, 5/2006 Document Number: MRF5S19060M
RF Device Data Freescale Semiconductor

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